BD435G
Manufacturer:
On Semiconductor
Mfr.Part #:
BD435G
Datasheet:
Description:
BJTs TO-225-3 Through Hole NPN 36 W Collector Base Voltage (VCBO):32 V Collector Emitter Voltage (VCEO):32 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 32 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | NPN |
| Frequency | 3 MHz |
| Number of Elements | 1 |
| Current Rating | 4 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 36 W |
| Power Dissipation | 36 W |
| Max Collector Current | 4 A |
| Collector Emitter Breakdown Voltage | 32 V |
| Transition Frequency | 3 MHz |
| Element Configuration | Single |
| Max Frequency | 3 MHz |
| Collector Emitter Voltage (VCEO) | 32 V |
| Gain Bandwidth Product | 3 MHz |
| Collector Base Voltage (VCBO) | 32 V |
| Collector Emitter Saturation Voltage | 500 mV |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 40 |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Max Cutoff Collector Current | 4 A |
| Transistor Type | NPN |
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